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Trapping of minority carriers in multicrystalline silicon

Macdonald, D; Cuevas, Andres

Description

Abnormally high effective carrier lifetimes have been observed in multicrystalline silicon wafers using both transient and steady-state photoconductance techniques. A simple model based on the presence of trapping centers explains this phenomenon both qualitatively and quantitatively. By fitting this model to experimental data acquired with a quasi-steady-state photoconductance technique, it is possible to determine the trap density, trap energy, and the ratio between the mean-trapping time and...[Show more]

CollectionsANU Research Publications
Date published: 1999
Type: Journal article
URI: http://hdl.handle.net/1885/40870
http://digitalcollections.anu.edu.au/handle/1885/40870

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