Trapping of minority carriers in multicrystalline silicon
Description
Abnormally high effective carrier lifetimes have been observed in multicrystalline silicon wafers using both transient and steady-state photoconductance techniques. A simple model based on the presence of trapping centers explains this phenomenon both qualitatively and quantitatively. By fitting this model to experimental data acquired with a quasi-steady-state photoconductance technique, it is possible to determine the trap density, trap energy, and the ratio between the mean-trapping time and...[Show more]
Collections | ANU Research Publications |
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Date published: | 1999 |
Type: | Journal article |
URI: | http://hdl.handle.net/1885/40870 http://digitalcollections.anu.edu.au/handle/1885/40870 |
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File | Description | Size | Format | Image |
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trapapl.pdf | 64.55 kB | Adobe PDF | ![]() |
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