Highest-quality surface passivation of low-resistivity p-type silicon using stoichiometric PECVD silicon nitride
Description
The surface passivation properties of silicon nitride (SiN) films fabricated by high-frequency direct plasma-enhanced chemical vapour deposition (PECVD) on low-resistivity (1 &cm) p-type silicon solar cell substrates have been investigated. The process gases used were ammonia and a mixture of silane and nitrogen. In order to find the optimum set of SiN deposition parameters, a large number of carrier lifetime test structures were prepared under different deposition conditions. The optimised...[Show more]
Collections | ANU Research Publications |
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Date published: | 1999 |
Type: | Conference paper |
URI: | http://hdl.handle.net/1885/40869 http://digitalcollections.anu.edu.au/handle/1885/40869 |
Source: | Solar Energy Materials and Solar Cells |
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File | Description | Size | Format | Image |
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Japan_paper3.pdf | 80.97 kB | Adobe PDF |
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