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Highest-quality surface passivation of low-resistivity p-type silicon using stoichiometric PECVD silicon nitride

Schmidt, Jan; Kerr, Mark John

Description

The surface passivation properties of silicon nitride (SiN) films fabricated by high-frequency direct plasma-enhanced chemical vapour deposition (PECVD) on low-resistivity (1 &cm) p-type silicon solar cell substrates have been investigated. The process gases used were ammonia and a mixture of silane and nitrogen. In order to find the optimum set of SiN deposition parameters, a large number of carrier lifetime test structures were prepared under different deposition conditions. The optimised...[Show more]

dc.contributor.authorSchmidt, Jan
dc.contributor.authorKerr, Mark John
dc.coverage.spatialHokkaido, Japan
dc.coverage.temporal20-24 September, 1999
dc.date.accessioned2003-08-25
dc.date.accessioned2004-05-19T13:03:19Z
dc.date.accessioned2011-01-05T08:29:38Z
dc.date.available2004-05-19T13:03:19Z
dc.date.available2011-01-05T08:29:38Z
dc.date.created1999
dc.identifier.issn0927-0248
dc.identifier.urihttp://hdl.handle.net/1885/40869
dc.identifier.urihttp://digitalcollections.anu.edu.au/handle/1885/40869
dc.description.abstractThe surface passivation properties of silicon nitride (SiN) films fabricated by high-frequency direct plasma-enhanced chemical vapour deposition (PECVD) on low-resistivity (1 &cm) p-type silicon solar cell substrates have been investigated. The process gases used were ammonia and a mixture of silane and nitrogen. In order to find the optimum set of SiN deposition parameters, a large number of carrier lifetime test structures were prepared under different deposition conditions. The optimised deposition parameters resulted in outstandingly low surface recombination velocities (SRVs) below 10 cm/s. Interestingly, we find the lowest SRVs for stoichiometric SiN films, as indicated by a refractive index of 1.9. In former studies similarly low SRVs had only been obtained for very silicon-rich SiN films. The fundamentally different passivation behaviour of our SiN films is attributed to the addition of nitrogen to the process gases.
dc.format.extent82918 bytes
dc.format.extent357 bytes
dc.format.mimetypeapplication/pdf
dc.format.mimetypeapplication/octet-stream
dc.language.isoen_AU
dc.publisherElsevier
dc.relation.ispartofseries11th Photovoltaic Science and Engineering Conference
dc.sourceSolar Energy Materials and Solar Cells
dc.subjectsilicon nitride
dc.subjectsurface passivation
dc.subjectPECVD
dc.subjectsilicon
dc.subjectsolar cells
dc.titleHighest-quality surface passivation of low-resistivity p-type silicon using stoichiometric PECVD silicon nitride
dc.typeConference paper
local.description.refereedno
local.identifier.citationvolume65
local.identifier.citationyear1999
local.identifier.eprintid1889
local.rights.ispublishedyes
dc.date.issued1999
local.identifier.absfor090699 - Electrical and Electronic Engineering not elsewhere classified
local.identifier.ariespublicationMigratedxPub2049
local.type.statusPublished Version
local.contributor.affiliationSchmidt, Jan, College of Engineering and Computer Science, ANU
local.contributor.affiliationKerr, Mark, College of Engineering and Computer Science, ANU
local.bibliographicCitation.startpage585
local.bibliographicCitation.lastpage591
dc.date.updated2015-12-10T11:35:19Z
CollectionsANU Research Publications

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