Highest-quality surface passivation of low-resistivity p-type silicon using stoichiometric PECVD silicon nitride
Description
The surface passivation properties of silicon nitride (SiN) films fabricated by high-frequency direct plasma-enhanced chemical vapour deposition (PECVD) on low-resistivity (1 &cm) p-type silicon solar cell substrates have been investigated. The process gases used were ammonia and a mixture of silane and nitrogen. In order to find the optimum set of SiN deposition parameters, a large number of carrier lifetime test structures were prepared under different deposition conditions. The optimised...[Show more]
dc.contributor.author | Schmidt, Jan | |
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dc.contributor.author | Kerr, Mark John | |
dc.coverage.spatial | Hokkaido, Japan | |
dc.coverage.temporal | 20-24 September, 1999 | |
dc.date.accessioned | 2003-08-25 | |
dc.date.accessioned | 2004-05-19T13:03:19Z | |
dc.date.accessioned | 2011-01-05T08:29:38Z | |
dc.date.available | 2004-05-19T13:03:19Z | |
dc.date.available | 2011-01-05T08:29:38Z | |
dc.date.created | 1999 | |
dc.identifier.issn | 0927-0248 | |
dc.identifier.uri | http://hdl.handle.net/1885/40869 | |
dc.identifier.uri | http://digitalcollections.anu.edu.au/handle/1885/40869 | |
dc.description.abstract | The surface passivation properties of silicon nitride (SiN) films fabricated by high-frequency direct plasma-enhanced chemical vapour deposition (PECVD) on low-resistivity (1 &cm) p-type silicon solar cell substrates have been investigated. The process gases used were ammonia and a mixture of silane and nitrogen. In order to find the optimum set of SiN deposition parameters, a large number of carrier lifetime test structures were prepared under different deposition conditions. The optimised deposition parameters resulted in outstandingly low surface recombination velocities (SRVs) below 10 cm/s. Interestingly, we find the lowest SRVs for stoichiometric SiN films, as indicated by a refractive index of 1.9. In former studies similarly low SRVs had only been obtained for very silicon-rich SiN films. The fundamentally different passivation behaviour of our SiN films is attributed to the addition of nitrogen to the process gases. | |
dc.format.extent | 82918 bytes | |
dc.format.extent | 357 bytes | |
dc.format.mimetype | application/pdf | |
dc.format.mimetype | application/octet-stream | |
dc.language.iso | en_AU | |
dc.publisher | Elsevier | |
dc.relation.ispartofseries | 11th Photovoltaic Science and Engineering Conference | |
dc.source | Solar Energy Materials and Solar Cells | |
dc.subject | silicon nitride | |
dc.subject | surface passivation | |
dc.subject | PECVD | |
dc.subject | silicon | |
dc.subject | solar cells | |
dc.title | Highest-quality surface passivation of low-resistivity p-type silicon using stoichiometric PECVD silicon nitride | |
dc.type | Conference paper | |
local.description.refereed | no | |
local.identifier.citationvolume | 65 | |
local.identifier.citationyear | 1999 | |
local.identifier.eprintid | 1889 | |
local.rights.ispublished | yes | |
dc.date.issued | 1999 | |
local.identifier.absfor | 090699 - Electrical and Electronic Engineering not elsewhere classified | |
local.identifier.ariespublication | MigratedxPub2049 | |
local.type.status | Published Version | |
local.contributor.affiliation | Schmidt, Jan, College of Engineering and Computer Science, ANU | |
local.contributor.affiliation | Kerr, Mark, College of Engineering and Computer Science, ANU | |
local.bibliographicCitation.startpage | 585 | |
local.bibliographicCitation.lastpage | 591 | |
dc.date.updated | 2015-12-10T11:35:19Z | |
Collections | ANU Research Publications |
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