Electronic properties of the recombination centers responsible for the light-induced carrier lifetime degradation in boron-doped Czochralski silicon
In order to study the electronic properties of the recombination centers responsible for the lightinduced carrier lifetime degradation commonly observed in high-purity boron-doped Czochralski (Cz) silicon, injection-level dependent carrier lifetime measurements are performed on a large number of boron-doped p-type Cz silicon wafers of various resistivities (1 – 31 Wcm) prior to and after light degradation. The measurement technique used is the contactless quasi-steady state photoconductance...[Show more]
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