Skip navigation
Skip navigation

Electronic properties of the recombination centers responsible for the light-induced carrier lifetime degradation in boron-doped Czochralski silicon

Schmidt, Jan; Cuevas, Andres

Description

In order to study the electronic properties of the recombination centers responsible for the lightinduced carrier lifetime degradation commonly observed in high-purity boron-doped Czochralski (Cz) silicon, injection-level dependent carrier lifetime measurements are performed on a large number of boron-doped p-type Cz silicon wafers of various resistivities (1 – 31 Wcm) prior to and after light degradation. The measurement technique used is the contactless quasi-steady state photoconductance...[Show more]

CollectionsANU Research Publications
Date published: 1999
Type: Journal article
URI: http://hdl.handle.net/1885/40868
http://digitalcollections.anu.edu.au/handle/1885/40868

Download

File Description SizeFormat Image
janjap.pdf239.57 kBAdobe PDFThumbnail


Items in Open Research are protected by copyright, with all rights reserved, unless otherwise indicated.

Updated:  23 August 2018/ Responsible Officer:  University Librarian/ Page Contact:  Library Systems & Web Coordinator