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Boron-related minority-carrier trapping centers in p-type silicon

Macdonald, D; Kerr, Mark John; Cuevas, Andres

Description

Photoconductivity-based measurements of recombination lifetimes in multicrystalline silicon are often hampered by carrier trapping effects, which cause a characteristically large relative increase in the photoconductance. Single-crystal p-type float-zone wafers of varying resistivities were cross contaminated with multicrystalline wafers that exhibited such trapping. A proportion of the impurities present in the multicrystalline samples was found to effuse into the float-zone wafers, where they...[Show more]

dc.contributor.authorMacdonald, D
dc.contributor.authorKerr, Mark John
dc.contributor.authorCuevas, Andres
dc.date.accessioned2003-08-25
dc.date.accessioned2004-05-19T13:03:07Z
dc.date.accessioned2011-01-05T08:29:40Z
dc.date.available2004-05-19T13:03:07Z
dc.date.available2011-01-05T08:29:40Z
dc.date.created1999
dc.identifier.issn0003-6951
dc.identifier.urihttp://hdl.handle.net/1885/40866
dc.identifier.urihttp://digitalcollections.anu.edu.au/handle/1885/40866
dc.description.abstractPhotoconductivity-based measurements of recombination lifetimes in multicrystalline silicon are often hampered by carrier trapping effects, which cause a characteristically large relative increase in the photoconductance. Single-crystal p-type float-zone wafers of varying resistivities were cross contaminated with multicrystalline wafers that exhibited such trapping. A proportion of the impurities present in the multicrystalline samples was found to effuse into the float-zone wafers, where they act as both recombination centers and trapping centers. By the application of a simple theoretical model, the trap density in the float-zone samples was determined, and found to be directly proportional to the boron-dopant concentration. These results suggest that the trapping centers are caused by boron-impurity pairs.
dc.format.extent54337 bytes
dc.format.extent353 bytes
dc.format.mimetypeapplication/pdf
dc.format.mimetypeapplication/octet-stream
dc.language.isoen_AU
dc.publisherAmerican Institute of Physics (AIP)
dc.sourceApplied Physics Letters
dc.subjectrecombination lifetimes
dc.subjectmulticrystalline silicon
dc.subjectphotoconductivity-based measurements
dc.subjecttrapping centers
dc.titleBoron-related minority-carrier trapping centers in p-type silicon
dc.typeJournal article
local.description.refereedyes
local.identifier.citationmonthsep
local.identifier.citationnumber11
local.identifier.citationpages1571-1573
local.identifier.citationpublicationApplied Physics Letters
local.identifier.citationvolume75
local.identifier.citationyear1999
local.identifier.eprintid1886
local.rights.ispublishedyes
dc.date.issued1999
local.identifier.absfor090699 - Electrical and Electronic Engineering not elsewhere classified
local.identifier.ariespublicationMigratedxPub22404
local.type.statusPublished Version
local.contributor.affiliationMacDonald, Daniel, College of Engineering and Computer Science, ANU
local.contributor.affiliationKerr, Mark, College of Engineering and Computer Science, ANU
local.contributor.affiliationCuevas, Andres, College of Engineering and Computer Science, ANU
local.bibliographicCitation.startpage1571
local.bibliographicCitation.lastpage1573
dc.date.updated2015-12-12T09:12:23Z
local.identifier.scopusID2-s2.0-0037632551
CollectionsANU Research Publications

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