Boron-related minority-carrier trapping centers in p-type silicon
Photoconductivity-based measurements of recombination lifetimes in multicrystalline silicon are often hampered by carrier trapping effects, which cause a characteristically large relative increase in the photoconductance. Single-crystal p-type float-zone wafers of varying resistivities were cross contaminated with multicrystalline wafers that exhibited such trapping. A proportion of the impurities present in the multicrystalline samples was found to effuse into the float-zone wafers, where they...[Show more]
|Collections||ANU Research Publications|
|Source:||Applied Physics Letters|
|boronapl.pdf||53.06 kB||Adobe PDF|
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