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Boron-related minority-carrier trapping centers in p-type silicon

Macdonald, D; Kerr, Mark John; Cuevas, Andres


Photoconductivity-based measurements of recombination lifetimes in multicrystalline silicon are often hampered by carrier trapping effects, which cause a characteristically large relative increase in the photoconductance. Single-crystal p-type float-zone wafers of varying resistivities were cross contaminated with multicrystalline wafers that exhibited such trapping. A proportion of the impurities present in the multicrystalline samples was found to effuse into the float-zone wafers, where they...[Show more]

CollectionsANU Research Publications
Date published: 1999
Type: Journal article
Source: Applied Physics Letters


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