Recombination and trapping in multicrystalline silicon
Minority carrier recombination and trapping frequently coexist in multicrystalline silicon (mc-Si), with the latter effect obscuring both transient and steady-state measurements of the photoconductance. In this paper, the injection dependence of the measured lifetime is studied to gain insight into these physical mechanisms. A theoretical model for minority carrier trapping is shown to explain the anomalous dependence of the apparent lifetime with injection level and allow the evaluation of the...[Show more]
|Collections||ANU Research Publications|
|Source:||IEEE Transactions on Electron Devices|
|1885-01.2003-08-15T05:31:15Z.xsh||352 B||EPrints MD5 Hash XML|
|trans99.pdf||167.25 kB||Adobe PDF|
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