Origins of carrier traps in p-type multicrystalline silicon
Carrier trapping effects in multicrystalline silicon wafers are investigated by measuring the dependence of their photoconductance on carrier injection level and by fitting a theoretical model to the data. The main information thus obtained is the density of trapping centres, which may be a useful indicator of the quality of the material. We have found that the trap density can vary significantly for different cast multicrystalline silicon ingots. Typically, the concentration of traps also...[Show more]
|Collections||ANU Research Publications|
|nrel99.pdf||62.12 kB||Adobe PDF|
Items in Open Research are protected by copyright, with all rights reserved, unless otherwise indicated.