Evidence of impurity gettering by industrial phosphorus diffusion
The possible benefits of phosphorus gettering as applied to production multicrystalline silicon wafers have been evaluated. After optimization of an open tube POCl3 process, relatively low temperatures and short times have been found to significantly improve the minority carrier lifetime of most wafers. The possible gettering action stemming from the industrial process of phosphorus diffusion has also been investigated and found to be similarly effective. Average lifetimes of 45ìs (diffusion...[Show more]
|Collections||ANU Research Publications|
|Source:||Conference Record of the Twenty-Eighth IEEE Photovoltaic Specialists Conference-2000|
|IEEE2000.PDF||58.65 kB||Adobe PDF|
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