Comparison of high quality surface passivation schemes for phosphorus diffused emitters
The emitter saturation current density (Joe) of various high quality passivation schemes on phosphorus diffused emitters has been measured and compared. The passivation schemes investigated were: (i) stoichiometric PECVD silicon nitride (SiN), (ii) forming gas annealed and alnealed thin thermal silicon oxides and (iii) double layers of thin thermal oxide and PECVD SiN. Optimised deposition parameters for our PECVD SiN layers have been determined. The best passivation schemes, for all sheet...[Show more]
|Collections||ANU Research Publications|
|Source:||Proceedings of the 16th European Photovoltaic Solar Energy Conference|
|emitter_passi_for_G.pdf||81.54 kB||Adobe PDF|
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