The trade-off between phosphorus gettering and thermal degradation in multicrystalline silicon
The bulk recombination lifetime of multicrystalline silicon wafers is found to initially increase with phosphorus gettering, but then, for low resistivity wafers, to decrease after a certain optimum gettering time. This peak is attributed to a trade-off between the competing mechanisms of lifetime improvement through impurity removal, and lifetime reduction due to ‘thermal degradation’. Such thermal degradation is found to be more pronounced in low resistivity samples. The physical cause of the...[Show more]
|Collections||ANU Research Publications|
|Source:||Proceedings of the 16th European Photovoltaic Solar Energy Conference|
|GLASPAP.PDF||154.53 kB||Adobe PDF|
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