On the use of a bias-light correction for trapping effects in photoconductance-based lifetime measurements of silicon
The effectiveness of a method for analytically reducing the effect of trapping centers on photoconductance-based recombination lifetime measurements in silicon is examined. The correction method involves the use of a ‘‘bias-light’’ term to subtract out the underlying photoconductance due to the traps. The technique extends, by approximately an order of magnitude, the range of carrier densities over which reasonably accurate (within 30%) measurements of the recombination lifetime can be made....[Show more]
|Collections||ANU Research Publications|
|Source:||Journal of Applied Physics|
|biasJAP.pdf||100.32 kB||Adobe PDF|
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