Lifetime spectroscopy of FeB pairs in silicon
Injection-level dependent lifetime curves of iron-contaminated silicon wafers of various resistivities have been modeled using Shockley-Read- Hall theory. The modeling allows accurate determination of the capture cross-sections of FeB pairs. These cross-sections are then used to extend the validity of a commonly used method for determining iron concentrations to all resistivities. The impact of interstitial iron on solar cell parameters is also modeled and discussed.
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