Lifetime spectroscopy of FeB pairs in silicon

Abstract

Injection-level dependent lifetime curves of iron-contaminated silicon wafers of various resistivities have been modeled using Shockley-Read- Hall theory. The modeling allows accurate determination of the capture cross-sections of FeB pairs. These cross-sections are then used to extend the validity of a commonly used method for determining iron concentrations to all resistivities. The impact of interstitial iron on solar cell parameters is also modeled and discussed.