Lifetime spectroscopy of FeB pairs in silicon
Description
Injection-level dependent lifetime curves of iron-contaminated silicon wafers of various resistivities have been modeled using Shockley-Read- Hall theory. The modeling allows accurate determination of the capture cross-sections of FeB pairs. These cross-sections are then used to extend the validity of a commonly used method for determining iron concentrations to all resistivities. The impact of interstitial iron on solar cell parameters is also modeled and discussed.
Collections | ANU Research Publications |
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Date published: | 2001 |
Type: | Conference paper |
URI: | http://hdl.handle.net/1885/40841 http://digitalcollections.anu.edu.au/handle/1885/40841 |
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File | Description | Size | Format | Image |
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nrelFeB.pdf | 220.51 kB | Adobe PDF | ![]() |
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