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Influence of copper on the carrier lifetime of n-type and p-type silicon

Stewart, K; Cuevas, Andres; Macdonald, D; Williams, James S

Description

Controlled contamination by ion implantation and careful surface passivation has been used to study the effect of copper on the recombination rate of charge carriers in silicon wafers. Our results confirm that copper strongly reduces the lifetime of n-type silicon, which approximately follows an Ncu .0.55 dependence on the copper dose. The effect of copper on p-type silicon, commonly used for solar cells, has been found to be as severe as on n-type silicon, when wafers having a similar dopant...[Show more]

CollectionsANU Research Publications
Date published: 2001
Type: Conference paper
URI: http://hdl.handle.net/1885/40840
http://digitalcollections.anu.edu.au/handle/1885/40840

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