Boron doping of silicon layers grown by liquid phase epitaxy
This paper presents the results of a study of the incorporation of boron into silicon layers grown from a tin melt by liquid phase epitaxy. Boron was added to the melt through the use of boron-doped silicon source wafers. There is a large discrepancy between the amount of boron incorporated into the epitaxial layer and that available in the source wafer. This mismatch is explained by the gradual removal of boron from our system, most likely as a result of boron precipitation in the tin melt....[Show more]
|Collections||ANU Research Publications|
|Source:||Journal of Crystal Growth|
|Bdoping_JCG_02.pdf||97.45 kB||Adobe PDF|
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