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An early deposited LPCVD silicon nitride: allowing the possibility of novel cell designs

McCann, Michelle Jane; Weber, K. J; Blakers, Andrew

Description

An LPCVD silicon nitride layer deposited in the early stages of cell fabrication has many properties that allow for increased processing flexibility and hence the realisation of novel cell designs. We have shown previously that excellent surface passivation can be achieved provided at least a thin oxide is present under the nitride. Surface passivation is lost once the wafer is heated, due to a loss of hydrogen from the silicon/oxide interface, but can be recovered entirely by re-introducing...[Show more]

dc.contributor.authorMcCann, Michelle Jane
dc.contributor.authorWeber, K. J
dc.contributor.authorBlakers, Andrew
dc.coverage.spatialOsaka, Japan
dc.coverage.temporalMay 11-18
dc.date.accessioned2003-07-30
dc.date.accessioned2004-05-19T13:00:21Z
dc.date.accessioned2011-01-05T08:52:41Z
dc.date.available2004-05-19T13:00:21Z
dc.date.available2011-01-05T08:52:41Z
dc.date.created2003
dc.identifier.urihttp://hdl.handle.net/1885/40827
dc.description.abstractAn LPCVD silicon nitride layer deposited in the early stages of cell fabrication has many properties that allow for increased processing flexibility and hence the realisation of novel cell designs. We have shown previously that excellent surface passivation can be achieved provided at least a thin oxide is present under the nitride. Surface passivation is lost once the wafer is heated, due to a loss of hydrogen from the silicon/oxide interface, but can be recovered entirely by re-introducing hydrogen to this interface. The work presented in this paper is concerned with hydrogen re-introduction using a high temperature forming gas anneal. We show that the thermal history of the wafer and the thickness of the silicon nitride layer both affect the time necessary to recover surface passivation.
dc.format.extent230545 bytes
dc.format.extent361 bytes
dc.format.mimetypeapplication/pdf
dc.language.isoen_AU
dc.relation.ispartofseries3rd World Conference of Photovoltaic Solar Energy Conversion
dc.subjectLPCVD silicon nitride
dc.subjectsolar cells
dc.subjectwafer thermal history
dc.titleAn early deposited LPCVD silicon nitride: allowing the possibility of novel cell designs
dc.typeConference paper
local.description.refereedno
local.identifier.citationyear2003
local.identifier.eprintid1774
local.rights.ispublishedyes
CollectionsANU Research Publications

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