Skip navigation
Skip navigation

An early deposited LPCVD silicon nitride: allowing the possibility of novel cell designs

McCann, Michelle Jane; Weber, K.J; Blakers, Andrew W


An LPCVD silicon nitride layer deposited in the early stages of cell fabrication has many properties that allow for increased processing flexibility and hence the realisation of novel cell designs. We have shown previously that excellent surface passivation can be achieved provided at least a thin oxide is present under the nitride. Surface passivation is lost once the wafer is heated, due to a loss of hydrogen from the silicon/oxide interface, but can be recovered entirely by re-introducing...[Show more]

CollectionsANU Research Publications
Date published: 2003
Type: Conference paper


File Description SizeFormat Image
1774-01.2003-07-23T01:19:59Z.xsh361 BEPrints MD5 Hash XML
Anearlydeposited.pdf225.14 kBAdobe PDFThumbnail

Items in Open Research are protected by copyright, with all rights reserved, unless otherwise indicated.

Updated:  20 July 2017/ Responsible Officer:  University Librarian/ Page Contact:  Library Systems & Web Coordinator