Implant isolation of Zn-dop GaAs epilayers : effects of ion species, doping concentration, and implantation temperature
The electrical isolation of Zn-doped GaAs layers grown by metalorganic chemical vapor deposition was studied using H, Li, C, and O ion implantation. The ion mass did not play a significant role in the stability of isolation, and a similar activation energy of ~(0.63+0.03eV) was obtained for isolation using either H or O ions. Furthermore, the isolation was stable against isochronal annealing up to 550 °C as long as the ion dose was 2–3.5 times the threshold dose for complete isolation, Dth ,...[Show more]
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