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A comparison of low-energy as ion implantation and impurity-free disordering induced defects in N-type GaAs epitaxial layers

Deenapanray, P.N.K; Svensson, B.G; Jagadish, Chennupati; Tan, Hark Hoe


We have compared the electrical properties of n-type GaAs layers disordered by either 40 keV As ion implantation or an impurity-free process employing an SiO2 capping layer. Current–voltage and capacitance–voltage measurements on Au Schottky barrier diodes fabricated on the processed layers showed that the impurity-free method retained the much better electrical quality of the GaAs epitaxial layers. Different sets of defects were observed in the implanted samples and impurity free disordered...[Show more]

CollectionsANU Research Publications
Date published: 2003
Type: Journal article
Source: Japanese Journal of Applied Physics


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