A comparison of low-energy as ion implantation and impurity-free disordering induced defects in N-type GaAs epitaxial layers
We have compared the electrical properties of n-type GaAs layers disordered by either 40 keV As ion implantation or an impurity-free process employing an SiO2 capping layer. Current–voltage and capacitance–voltage measurements on Au Schottky barrier diodes fabricated on the processed layers showed that the impurity-free method retained the much better electrical quality of the GaAs epitaxial layers. Different sets of defects were observed in the implanted samples and impurity free disordered...[Show more]
|Collections||ANU Research Publications|
|Source:||Japanese Journal of Applied Physics|
|2345-01.2004-01-06T04:21:36Z.xsh||349 B||EPrints MD5 Hash XML|
|LEAs.pdf||131.28 kB||Adobe PDF|
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