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Characterization of palladium-related defects in silicon

Dogra, R; Byrne, Aidan; Brett, David Alisdair; Ridgway, Mark C


Using 100Pd/100Rh probes, perturbed angular correlation measurements were performed to study Pd-related defects in Si as a function of dopant concentration and dopant type. Pd-vacancy and Pd-B complexes were identified by their characteristic electric field gradients in highly doped n- and p-type Si, respectively. Both pairs exhibited a T3/2 temperature dependence of their electric field gradients.

CollectionsANU Research Publications
Date published: 2007
Type: Journal article
Source: Hyperfine Interactions
DOI: 10.1007/s10751-008-9618-8


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