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Comparison of proton and arsenic implantation-induced intermixing in InGaAsP/InGaAs/InP and nAlGaAs/InGaAs/InP quantum wells

Du, Si; Fu, Lan; Jagadish, Chennupati; Tan, Hark Hoe


In this work, we studied the proton and arsenic ion implantation-induced intermixing in InGaAsP/InGaAs and InAlGaAs/InGaAs quantum wells. The results were compared and discussed based on the defect formation and evolution process under the different implantation conditions and QW barrier materials.

CollectionsANU Research Publications
Date published: 2008
Type: Conference paper
Source: Proceedings of the 2008 International Conference on Nanoscience and Nanotechnology
DOI: 10.1109/ICONN.2008.4639238


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