Investigations of impurity-free vacancy disordering in (Al)InGaAs(P)/InGaAs quantum wells
In this work, controlled band gap modifications in InGaAsP/InGaAs and AlInGaAs/InGaAs quantum well structures using different encapsulating layers are studied and compared. Photoluminescence spectroscopy was used for monitoring the changes in the optical
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|Source:||Semiconductor Science and Technology|
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