Skip navigation
Skip navigation

Investigations of impurity-free vacancy disordering in (Al)InGaAs(P)/InGaAs quantum wells

Du, Si; Fu, Lan; Jagadish, Chennupati; Tan, Hark Hoe


In this work, controlled band gap modifications in InGaAsP/InGaAs and AlInGaAs/InGaAs quantum well structures using different encapsulating layers are studied and compared. Photoluminescence spectroscopy was used for monitoring the changes in the optical

CollectionsANU Research Publications
Date published: 2010
Type: Journal article
Source: Semiconductor Science and Technology
DOI: 10.1088/0268-1242/25/5/055014


File Description SizeFormat Image
01_Du_Investigations_of_2010.pdf1.37 MBAdobe PDF    Request a copy

Items in Open Research are protected by copyright, with all rights reserved, unless otherwise indicated.

Updated:  17 November 2022/ Responsible Officer:  University Librarian/ Page Contact:  Library Systems & Web Coordinator