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Investigations of impurity-free vacancy disordering in (Al)InGaAs(P)/InGaAs quantum wells

Du, Si; Fu, Lan; Tan, Hoe Hark; Jagadish, Chennupati


In this work, controlled band gap modifications in InGaAsP/InGaAs and AlInGaAs/InGaAs quantum well structures using different encapsulating layers are studied and compared. Photoluminescence spectroscopy was used for monitoring the changes in the optical

CollectionsANU Research Publications
Date published: 2010
Type: Journal article
Source: Semiconductor Science and Technology
DOI: 10.1088/0268-1242/25/5/055014


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