Role of Stress on Impurity Free Disordering of Quantum Dots
We discuss the role of stress on diffusion of vacancies and interstitials theoretically. The stresses induced by SiO2 and TiO2 dielectric layers on InP and GaAs based QD structures are calculated and some reported quantum dot intermixing results are explained by a stress-induced forced interdiffusion model.
|Collections||ANU Research Publications|
|Source:||Proceedings of 2008 Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2008)|