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III-V semiconductor nanowires for optoelectronic device applications

Joyce, Hannah J; Gao, Qiang; Tan, Hoe Hark; Jagadish, Chennupati; Kim, Yong; Zou, Jin; Smith, Leigh M; Jackson, Howard E; Yarrison-Rice, Jan M; Parkinson, Patrick; Johnston, Michael B

Description

III-V semiconductor nanowires are promising candidates for optoelectronic device applications due to their unique one dimensional geometry. High quantum efficiency, defined as QE=τnr/(τnr+τr), where τnr is the non-radiative lifetime and τr is the rad

CollectionsANU Research Publications
Date published: 2011
Type: Journal article
URI: http://hdl.handle.net/1885/38329
Source: Progress in Quantum Electronics
DOI: 10.1109/ICMAP.2013.6733456

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