III-V semiconductor nanowires for optoelectronic device applications
III-V semiconductor nanowires are promising candidates for optoelectronic device applications due to their unique one dimensional geometry. High quantum efficiency, defined as QE=τnr/(τnr+τr), where τnr is the non-radiative lifetime and τr is the rad
|Collections||ANU Research Publications|
|Source:||Progress in Quantum Electronics|
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