III-V semiconductor nanowires for optoelectronic device applications
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Joyce, Hannah J; Gao, Qiang; Jagadish, Chennupati; Kim, Yong; Zou, Jin; Smith, Leigh M; Jackson, Howard E; Yarrison-Rice, Jan M; Parkinson, Patrick; Johnston, Michael B; Tan, Hark Hoe
Description
III-V semiconductor nanowires are promising candidates for optoelectronic device applications due to their unique one dimensional geometry. High quantum efficiency, defined as QE=τnr/(τnr+τr), where τnr is the non-radiative lifetime and τr is the rad
Collections | ANU Research Publications |
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Date published: | 2011 |
Type: | Journal article |
URI: | http://hdl.handle.net/1885/38329 |
Source: | Progress in Quantum Electronics |
DOI: | 10.1109/ICMAP.2013.6733456 |
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