The in-plane magnetic anisotropy of RF-sputtered FeNiN thin films
FeNiN thin films were synthesized on Si(100) substrates at room temperature by RF magnetron sputtering. The nitrogen concentration dependence of their phase structure and magnetic properties was systematically investigated. With increasing nitrogen partial pressure (P N2), the FeNiN thin films successively showed a ?-Fe phase at P N2? 5.0%, then a pure - Fe 3N phase at P N2 = 15.0%, and then a -?(Fe, Ni) 2 N phase at P N2 = 25.0%, but there was no ? -(Fe, Ni) 4in the whole P N2 range. These...[Show more]
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|Source:||Physica Status Solidi. A: Applications and Materials Science (Online)|
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