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Electron dynamics in modulation p-doped InGaAs/GaAs quantum dots

Wen, XiaoMing; Dao, Lap Van; Hannaford, Peter; Mokkapati, Sudha; Jagadish, Chennupati; Tan, Hark Hoe


We investigate the electron dynamics of p-type modulation doped and undoped InGaAs/GaAs quantum dots using up-conversion photoluminescence at low temperature and room temperature. The rise time of the p-doped sample is significantly shorter than that of the undoped at low temperature. With increasing to room temperature the undoped sample exhibits a decreased rise time whilst that of the doped sample does not change. A relaxation mechanism of electron-hole scattering is proposed in which the...[Show more]

CollectionsANU Research Publications
Date published: 2008
Type: Journal article
Source: European Physical Journal B
DOI: 10.1140/epjb/e2008-00127-8


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