Electron dynamics in modulation p-doped InGaAs/GaAs quantum dots
We investigate the electron dynamics of p-type modulation doped and undoped InGaAs/GaAs quantum dots using up-conversion photoluminescence at low temperature and room temperature. The rise time of the p-doped sample is significantly shorter than that of the undoped at low temperature. With increasing to room temperature the undoped sample exhibits a decreased rise time whilst that of the doped sample does not change. A relaxation mechanism of electron-hole scattering is proposed in which the...[Show more]
|Collections||ANU Research Publications|
|Source:||European Physical Journal B|
Items in Open Research are protected by copyright, with all rights reserved, unless otherwise indicated.