Erbium Emission from Nanoengineered Silicon Surface
Optically active SiOx nanowires were grown on silicon by ion-implanting it with metallic impurities and annealed at 1100 °C in an Ar ambient. The implanted metals precipitate on the silicon surface and act as catalysts for nanowire growth. Ion implantati
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|Source:||Journal of Physical Chemistry C|
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