Skip navigation
Skip navigation

Erbium Emission from Nanoengineered Silicon Surface

Sekhar, P; Wilkinson, Andrew; Elliman, Robert; Kim, Tae-Hyun; Bhansali, Shekhar

Description

Optically active SiOx nanowires were grown on silicon by ion-implanting it with metallic impurities and annealed at 1100 °C in an Ar ambient. The implanted metals precipitate on the silicon surface and act as catalysts for nanowire growth. Ion implantati

CollectionsANU Research Publications
Date published: 2008
Type: Journal article
URI: http://hdl.handle.net/1885/37590
Source: Journal of Physical Chemistry C
DOI: 10.1021/jp808462j

Download

There are no files associated with this item.


Items in Open Research are protected by copyright, with all rights reserved, unless otherwise indicated.

Updated:  23 August 2018/ Responsible Officer:  University Librarian/ Page Contact:  Library Systems & Web Coordinator