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Erbium Emission from Nanoengineered Silicon Surface

Sekhar, P; Wilkinson, Andrew; Elliman, Robert; Kim, Tae-Hyun; Bhansali, Shekhar


Optically active SiOx nanowires were grown on silicon by ion-implanting it with metallic impurities and annealed at 1100 °C in an Ar ambient. The implanted metals precipitate on the silicon surface and act as catalysts for nanowire growth. Ion implantati

CollectionsANU Research Publications
Date published: 2008
Type: Journal article
Source: Journal of Physical Chemistry C
DOI: 10.1021/jp808462j


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