A model for the steady-state photoconductance of an abrupt p-n junction semiconductor diode assuming flat quasi-fermi levels
A theoretical model for the steady-state photoconductance of an abrupt p-n junction semiconductor diode is presented. It assumes one-dimensional geometry and flat quasi-Fermi levels (QFLs) and involves a numerical integration over electrostatic potential. The flat-QFL model permits the determination of the excess carrier concentration in both quasi-neutral regions from a measurement of a semiconductor's photoconductance, accounting for depletion-region modulation more accurately than its...[Show more]
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|Source:||IEEE Transactions on Electron Devices|
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