Growth of Triangular Shaped InGaAs/GaAs Quantum Wire Structures
The growth of traingular shaped InGaAs/GaAs quantum wire structures was studied by using metalorganic chemical vapor deposition (MOCVD) technique. The cleaved surface and top surface morphology of the grown structures were analyzed by using scanning electron microscopy (SEM). The results showed the dependence on the opening width of the height of the grown traingular shaped quantum wire structures.
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|Source:||Journal of Materials Science Letters|
|01_Kim_Growth_of_Triangular_Shaped_2003.pdf||696.87 kB||Adobe PDF||Request a copy|
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