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Growth of Triangular Shaped InGaAs/GaAs Quantum Wire Structures

Kim, S-I; Han, I-K; Chung, S W; Jagadish, Chennupati


The growth of traingular shaped InGaAs/GaAs quantum wire structures was studied by using metalorganic chemical vapor deposition (MOCVD) technique. The cleaved surface and top surface morphology of the grown structures were analyzed by using scanning electron microscopy (SEM). The results showed the dependence on the opening width of the height of the grown traingular shaped quantum wire structures.

CollectionsANU Research Publications
Date published: 2003
Type: Journal article
Source: Journal of Materials Science Letters
DOI: 10.1023/A:1022976131428


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