Ion implantation in 4H-SiC
Silicon carbide offers unique applications as a wide bandgap semiconductor. This paper reviews various aspects of ion implantation in 4H-SiC studied with a view to optimise ion implantation in silicon carbide. Al, P and Si ions with keV energies were used. Channelling effects were studied in both a-axis and c-axis crystals as a function of tilts along major orthogonal planes and off the major orthogonal planes. Major axes such as [0 0 0 1] and the [1 1 over(2, ̄) 0] and minor axis like the [1 1...[Show more]
|Collections||ANU Research Publications|
|Source:||Nuclear Instruments and Methods in Physics Research: Section B|
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