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Ion implantation in 4H-SiC

Wong-Leung, Yin-Yin (Jennifer); Janson, M S; Kuznetsov, A Yu; Svensson, Bengt Gunnar; Linnarsson, M K; Hallen, A; Jagadish, Chennupati; Cockayne, David John Hugh

Description

Silicon carbide offers unique applications as a wide bandgap semiconductor. This paper reviews various aspects of ion implantation in 4H-SiC studied with a view to optimise ion implantation in silicon carbide. Al, P and Si ions with keV energies were used. Channelling effects were studied in both a-axis and c-axis crystals as a function of tilts along major orthogonal planes and off the major orthogonal planes. Major axes such as [0 0 0 1] and the [1 1 over(2, ̄) 0] and minor axis like the [1 1...[Show more]

CollectionsANU Research Publications
Date published: 2008
Type: Journal article
URI: http://hdl.handle.net/1885/36973
Source: Nuclear Instruments and Methods in Physics Research: Section B
DOI: 10.1016/j.nimb.2007.12.049

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