Measurement of latent tracks in amorphous SiO2 using small angle X-ray scattering
In this paper we present preliminary yet promising results on the measurement of latent ion tracks in amorphous, 2 μm thick SiO2 layers using small angle X-ray scattering (SAXS). The tracks were generated by ion irradiation with 89 MeV Au ions to fluence
|Collections||ANU Research Publications|
|Source:||Nuclear Instruments and Methods in Physics Research: Section B|
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