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Photoluminescence, Deep Level Transient Spectroscopy and Transmission Electron Micrsocopy Measurements on MeV Self-Ion Implanted and Annealed n-type Silicon

Schmidt, D. C.; Svensson, B; Seibt, M; Jagadish, Chennupati; Davies, G

Description

Deep-level transient spectroscopy (DLTS), photoluminescence (PL), and transmission electron microscopy (TEM) measurements have been made on n-type silicon after implanting with 5.6 MeV Si3+ ions using doses of 109 - 1014 cm-2 and anneals at 525 and 750°C

CollectionsANU Research Publications
Date published: 2000
Type: Journal article
URI: http://hdl.handle.net/1885/36802
Source: Journal of Applied Physics

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