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Reversible resistance switching properties in Ti-doped polycrystalline Ta2O5 thin films

He, Xiliang; Li, Xiaomin; Gao, Xiangdong; Yu, Weidong; Yang, Rui; Liu, Xinjun; Cao, Xun


Unipolar reversible resistance switching effects were found in 5 at% Ti-doped polycrystalline Ta 2O 5 films with the device structure of Pt/Ti-Ta 2O 5/Pt. Results suggest that the recovery/rupture of the conductive filaments which are involved in the participation of oxygen vacancies and electrons leads to the resistance switching process. Tidoped Ta 2O 5 thin films possess higher resistance whether in low-resistance state or high-resistance state and higher resistance switching ratio than Ta...[Show more]

CollectionsANU Research Publications
Date published: 2012
Type: Journal article
Source: Applied Physics A: Materials Science and Processing
DOI: 10.1007/s00339-012-6868-8


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