Reversible resistance switching properties in Ti-doped polycrystalline Ta2O5 thin films
Unipolar reversible resistance switching effects were found in 5 at% Ti-doped polycrystalline Ta 2O 5 films with the device structure of Pt/Ti-Ta 2O 5/Pt. Results suggest that the recovery/rupture of the conductive filaments which are involved in the participation of oxygen vacancies and electrons leads to the resistance switching process. Tidoped Ta 2O 5 thin films possess higher resistance whether in low-resistance state or high-resistance state and higher resistance switching ratio than Ta...[Show more]
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|Source:||Applied Physics A: Materials Science and Processing|
|01_He_Reversible_resistance_2012.pdf||840.08 kB||Adobe PDF||Request a copy|
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