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Mechanisms of electrical isolation in O+-irradiated ZnO

Zubiaga, A; Tuomisto, F; Coleman, Victoria A; Jagadish, Chennupati; Koike, Kazuto; Sasa, Shigehiko; Inoue, Masataka; Yano, Mitsuaki; Tan, Hark Hoe

Description

We have applied positron annihilation spectroscopy combined with sheet resistance measurements to study the electrical isolation of thin ZnO layers irradiated with 2 MeV O+ ions at various fluences. Our results indicate that Zn vacancies, the dominant defects detected by positrons, are produced in the irradiation at a relatively low rate of about 2000 cm-1 when the ion fluence is at most 1015 cm-2 and that vacancy clusters are created at higher fluences. The Zn vacancies introduced in the...[Show more]

dc.contributor.authorZubiaga, A
dc.contributor.authorTuomisto, F
dc.contributor.authorColeman, Victoria A
dc.contributor.authorJagadish, Chennupati
dc.contributor.authorKoike, Kazuto
dc.contributor.authorSasa, Shigehiko
dc.contributor.authorInoue, Masataka
dc.contributor.authorYano, Mitsuaki
dc.contributor.authorTan, Hark Hoe
dc.date.accessioned2015-12-08T22:41:37Z
dc.date.available2015-12-08T22:41:37Z
dc.identifier.issn1098-0121
dc.identifier.urihttp://hdl.handle.net/1885/36727
dc.description.abstractWe have applied positron annihilation spectroscopy combined with sheet resistance measurements to study the electrical isolation of thin ZnO layers irradiated with 2 MeV O+ ions at various fluences. Our results indicate that Zn vacancies, the dominant defects detected by positrons, are produced in the irradiation at a relatively low rate of about 2000 cm-1 when the ion fluence is at most 1015 cm-2 and that vacancy clusters are created at higher fluences. The Zn vacancies introduced in the irradiation act as dominant compensating centers and cause the electrical isolation, while the results suggest that the vacancy clusters are electrically inactive.
dc.publisherAmerican Physical Society
dc.sourcePhysical Review B: Condensed Matter and Materials
dc.titleMechanisms of electrical isolation in O+-irradiated ZnO
dc.typeJournal article
local.description.notesImported from ARIES
local.identifier.citationvolume78
dc.date.issued2008
local.identifier.absfor020499 - Condensed Matter Physics not elsewhere classified
local.identifier.ariespublicationu3488905xPUB140
local.type.statusPublished Version
local.contributor.affiliationZubiaga, A, Helsinki University of Technology
local.contributor.affiliationTuomisto, F, Helsinki University of Technology
local.contributor.affiliationColeman, Victoria A, College of Physical and Mathematical Sciences, ANU
local.contributor.affiliationTan, Hoe Hark, College of Physical and Mathematical Sciences, ANU
local.contributor.affiliationJagadish, Chennupati, College of Physical and Mathematical Sciences, ANU
local.contributor.affiliationKoike, Kazuto, Osaka Institute of Technology
local.contributor.affiliationSasa, Shigehiko, Osaka Institute of Technology
local.contributor.affiliationInoue, Masataka, Osaka Institute of Technology
local.contributor.affiliationYano, Mitsuaki, Osaka Institute of Technology
local.bibliographicCitation.issue3
local.bibliographicCitation.startpage1
local.bibliographicCitation.lastpage5
local.identifier.doi10.1103/PhysRevB.78.035125
dc.date.updated2015-12-08T10:29:21Z
local.identifier.scopusID2-s2.0-48949105170
local.identifier.thomsonID000258190300054
CollectionsANU Research Publications

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