Mechanisms of electrical isolation in O+-irradiated ZnO
We have applied positron annihilation spectroscopy combined with sheet resistance measurements to study the electrical isolation of thin ZnO layers irradiated with 2 MeV O+ ions at various fluences. Our results indicate that Zn vacancies, the dominant defects detected by positrons, are produced in the irradiation at a relatively low rate of about 2000 cm-1 when the ion fluence is at most 1015 cm-2 and that vacancy clusters are created at higher fluences. The Zn vacancies introduced in the...[Show more]
|Collections||ANU Research Publications|
|Source:||Physical Review B: Condensed Matter and Materials|
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