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Mechanisms of electrical isolation in O+-irradiated ZnO

Zubiaga, A; Tuomisto, F; Coleman, Victoria A; Tan, Hoe Hark; Jagadish, Chennupati; Koike, Kazuto; Sasa, Shigehiko; Inoue, Masataka; Yano, Mitsuaki

Description

We have applied positron annihilation spectroscopy combined with sheet resistance measurements to study the electrical isolation of thin ZnO layers irradiated with 2 MeV O+ ions at various fluences. Our results indicate that Zn vacancies, the dominant defects detected by positrons, are produced in the irradiation at a relatively low rate of about 2000 cm-1 when the ion fluence is at most 1015 cm-2 and that vacancy clusters are created at higher fluences. The Zn vacancies introduced in the...[Show more]

CollectionsANU Research Publications
Date published: 2008
Type: Journal article
URI: http://hdl.handle.net/1885/36727
Source: Physical Review B: Condensed Matter and Materials
DOI: 10.1103/PhysRevB.78.035125

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