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Comparative Studies using EXAFS and PAC of Lattice Damage in Semiconductors

Byrne, Aidan; Ridgway, Mark C; Glover, Christopher; Bezakova, E

Description

We have used the perturbed angular correlation (PAC) method and extended X-ray absorption fine structure spectroscopy (EXAFS), along with microscopic methods to investigate the implantation induced disorder and characterize the ion-induced amorphisation of elemental and compound semiconductors.

CollectionsANU Research Publications
Date published: 2004
Type: Journal article
URI: http://hdl.handle.net/1885/36414
Source: Hyperfine Interactions
DOI: 10.1007/s10751-005-9040-4

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