Pulsed laser deposited stoichiometric ZnO thin films
Room temperature free-exciton emission was observed in stoichiometric ZnO epilayers grown on Al2O3 substrates by pulsed laser deposition. Absorption and photoluminescence measurements clearly showed the free- exciton emissions at 3.30∼3.31 eV. This free
|Collections||ANU Research Publications|
|Source:||Proceedings of 2008 Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2008)|
|01_Ashrafi_Pulsed_laser_deposited_2008.pdf||1.46 MB||Adobe PDF||Request a copy|
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