Synthesis of nickel disilicide quantum dots in silicon dioxide films
Nickel disilicide (NiS2) quantum dots (QDs) have been grown in silicon-rich oxide (SiOx) films by either ion implanting with nickel or coating with an evaporated Ni film and annealing at 1100 °C. It is shown that both techniques produce well-defined sing
|Collections||ANU Research Publications|
|Source:||Colloids and Surfaces A: Physicochemical and Engineering Aspects|
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