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Synthesis of nickel disilicide quantum dots in silicon dioxide films

Yoon, Jong-Hwan; Elliman, Robert


Nickel disilicide (NiS2) quantum dots (QDs) have been grown in silicon-rich oxide (SiOx) films by either ion implanting with nickel or coating with an evaporated Ni film and annealing at 1100 °C. It is shown that both techniques produce well-defined sing

CollectionsANU Research Publications
Date published: 2008
Type: Journal article
Source: Colloids and Surfaces A: Physicochemical and Engineering Aspects
DOI: 10.1016/j.colsurfa.2007.05.043


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