Charge Density in Atmospheric Pressure Chemical Vapor Deposition TiO 2 on SiO 2 -Passivated Silicon
The charge density of a TiO2 film deposited on a SiO2 -passivated silicon wafer is determined. The TiO2 is deposited by atmospheric pressure chemical vapor deposition at 400°C, and the SiO2 is grown thermally at 950°C. This TiO2 - SiO2 stack is a useful
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|Source:||Journal of the Electrochemical Society|
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