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Charge Density in Atmospheric Pressure Chemical Vapor Deposition TiO 2 on SiO 2 -Passivated Silicon

McIntosh, Keith; Baker-Finch, Simeon; Grant, Nicholas; Thomson, Andrew; Singh, Sonita; Baikie, Iain D.


The charge density of a TiO2 film deposited on a SiO2 -passivated silicon wafer is determined. The TiO2 is deposited by atmospheric pressure chemical vapor deposition at 400°C, and the SiO2 is grown thermally at 950°C. This TiO2 - SiO2 stack is a useful

CollectionsANU Research Publications
Date published: 2009
Type: Journal article
Source: Journal of the Electrochemical Society
DOI: 10.1149/1.3216029


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