Skip navigation
Skip navigation

Tuning the bandgap of InAs quantum dots by selective-area MOCVD

Mokkapati, Sudha; Wong-Leung, Jennifer; Jagadish, Chennupati; McBean, K. E.; Phillips, Matthew R.; Tan, Hark Hoe


In-plane bandgap energy control of InAs quantum dots (QDs) grown on GaAs substrates is demonstrated using selective-area epitaxy. Transmission electron microscopy and cathodoluminescence are used for characterization of the selectively grown dots. A single-step growth of a thin InAs quantum well and InAs QDs emitting at 1010 and 1100 nm (at 77 K) on the same wafer is demonstrated. Non-uniform growth profile is reported for the selectively grown QDs in the mask openings. Surface migration of...[Show more]

CollectionsANU Research Publications
Date published: 2008
Type: Journal article
Source: Journal of Physics D: Applied Physics
DOI: 10.1088/0022-3727/41/8/085104


File Description SizeFormat Image
Mokkapati_2008_J._Phys._D__Appl._Phys._41_085104.pdf888.38 kBAdobe PDF    Request a copy

Items in Open Research are protected by copyright, with all rights reserved, unless otherwise indicated.

Updated:  19 May 2020/ Responsible Officer:  University Librarian/ Page Contact:  Library Systems & Web Coordinator