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Tuning the bandgap of InAs quantum dots by selective-area MOCVD

Mokkapati, Sudha; Wong-Leung, Yin-Yin (Jennifer); Tan, Hoe Hark; Jagadish, Chennupati; McBean, K E; Phillips, Matthew R

Description

In-plane bandgap energy control of InAs quantum dots (QDs) grown on GaAs substrates is demonstrated using selective-area epitaxy. Transmission electron microscopy and cathodoluminescence are used for characterization of the selectively grown dots. A single-step growth of a thin InAs quantum well and InAs QDs emitting at 1010 and 1100 nm (at 77 K) on the same wafer is demonstrated. Non-uniform growth profile is reported for the selectively grown QDs in the mask openings. Surface migration of...[Show more]

CollectionsANU Research Publications
Date published: 2008
Type: Journal article
URI: http://hdl.handle.net/1885/35755
Source: Journal of Physics D: Applied Physics
DOI: 10.1088/0022-3727/41/8/085104

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