Tuning the bandgap of InAs quantum dots by selective-area MOCVD
In-plane bandgap energy control of InAs quantum dots (QDs) grown on GaAs substrates is demonstrated using selective-area epitaxy. Transmission electron microscopy and cathodoluminescence are used for characterization of the selectively grown dots. A single-step growth of a thin InAs quantum well and InAs QDs emitting at 1010 and 1100 nm (at 77 K) on the same wafer is demonstrated. Non-uniform growth profile is reported for the selectively grown QDs in the mask openings. Surface migration of...[Show more]
|Collections||ANU Research Publications|
|Source:||Journal of Physics D: Applied Physics|
|Mokkapati_2008_J._Phys._D__Appl._Phys._41_085104.pdf||888.38 kB||Adobe PDF||Request a copy|
Items in Open Research are protected by copyright, with all rights reserved, unless otherwise indicated.