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Lifetime degradation mechanism in boron-doped Czochralski silicon

Voronkov, V; Falster , R; Batunina, A; MacDonald, Daniel; Bothe, Karsten; Schmidt, Jan

Description

The recombination centre that emerges in boron- and oxygen-containing silicon was thought to be a complex of a substitutional boron atom Bs and an oxygen dimer O2. However in material co-doped with boron and phosphorus, the degradation parameters were reported to correlate with the hole concentration p rather than with the boron concentration. In the present work, the temperature dependence of the Hall Effect was measured in co-doped and reference samples and the concentrations of isolated...[Show more]

CollectionsANU Research Publications
Date published: 2011
Type: Conference paper
URI: http://hdl.handle.net/1885/35746
Source: Energy Procedia
DOI: 10.1016/j.egypro.2011.01.008

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