Skip navigation
Skip navigation

Vertically standing Ge nanowires on GaAs(110) substrates

link to publisher version

Song, Man Suk; Jung, Jae Hun; Kim, Yong; Wang, Y; Zou, Jin; Joyce, Hannah J; Gao, Qiang; Tan, Hoe Hark; Jagadish, Chennupati

Description

The growth of epitaxial Ge nanowires is investigated on (100), (111) B and (110) GaAs substrates in the growth temperature range from 300 to 380°C. Unlike epitaxial Ge nanowires on Ge or Si substrates, Ge nanowires on GaAs substrates grow predominantly a

CollectionsANU Research Publications
Date published: 2008
Type: Journal article
URI: http://hdl.handle.net/1885/35573
Source: Nanotechnology
DOI: 10.1088/0957-4484/19/12/125602

Download

There are no files associated with this item.
Show full item record


Items in Open Research are protected by copyright, with all rights reserved, unless otherwise indicated.

Updated:  20 July 2017/ Responsible Officer:  University Librarian/ Page Contact:  Library Systems & Web Coordinator