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Vertically standing Ge nanowires on GaAs(110) substrates

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Song, Man Suk; Jung, Jae Hun; Kim, Yong; Wang, Y; Zou, Jin; Joyce, Hannah J; Gao, Qiang; Jagadish, Chennupati; Tan, Hark Hoe

Description

The growth of epitaxial Ge nanowires is investigated on (100), (111) B and (110) GaAs substrates in the growth temperature range from 300 to 380°C. Unlike epitaxial Ge nanowires on Ge or Si substrates, Ge nanowires on GaAs substrates grow predominantly a

CollectionsANU Research Publications
Date published: 2008
Type: Journal article
URI: http://hdl.handle.net/1885/35573
Source: Nanotechnology
DOI: 10.1088/0957-4484/19/12/125602

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