Vertically standing Ge nanowires on GaAs(110) substrates
Song, Man Suk; Jung, Jae Hun; Kim, Yong; Wang, Y; Zou, Jin; Joyce, Hannah J; Gao, Qiang; Tan, Hoe Hark; Jagadish, Chennupati
Description
The growth of epitaxial Ge nanowires is investigated on (100), (111) B and (110) GaAs substrates in the growth temperature range from 300 to 380°C. Unlike epitaxial Ge nanowires on Ge or Si substrates, Ge nanowires on GaAs substrates grow predominantly a
Collections | ANU Research Publications |
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Date published: | 2008 |
Type: | Journal article |
URI: | http://hdl.handle.net/1885/35573 |
Source: | Nanotechnology |
DOI: | 10.1088/0957-4484/19/12/125602 |
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