Influence of Annealing and Bulk Hydrogenation on Lifetime Limiting Defects in Nitrogen-Doped Floating Zone Silicon
A recombination active defect is found in as-grown high-purity floating zone n-type silicon wafers containing grown-in nitrogen. In order to identify the properties of the defect, injection-dependent minority carrier lifetime measurements, secondary ion mass spectroscopy measurements, and photoluminescence lifetime imaging are performed. The lateral recombination center distribution varies greatly in a radially symmetric way, while the nitrogen concentration remains constant. The defect is...[Show more]
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|Source:||IEEE Journal of Photovoltaics|
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