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Influence of Annealing and Bulk Hydrogenation on Lifetime Limiting Defects in Nitrogen-Doped Floating Zone Silicon

Rougieux, Fiacre; Grant, Nicholas; Barugkin (Qiaoke), Chog; MacDonald, Daniel; murphy, john

Description

A recombination active defect is found in as-grown high-purity floating zone n-type silicon wafers containing grown-in nitrogen. In order to identify the properties of the defect, injection-dependent minority carrier lifetime measurements, secondary ion mass spectroscopy measurements, and photoluminescence lifetime imaging are performed. The lateral recombination center distribution varies greatly in a radially symmetric way, while the nitrogen concentration remains constant. The defect is...[Show more]

CollectionsANU Research Publications
Date published: 2015
Type: Journal article
URI: http://hdl.handle.net/1885/35544
Source: IEEE Journal of Photovoltaics
DOI: 10.1109/JPHOTOV.2014.2367912

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