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Effect of ion-implantation enhanced intermixing on luminescence of InAs/InP quantum dots

Li, Qing; Barik, Satyanarayan; Jagadish, Chennupati; Tan, Hark Hoe

Description

Temperature dependent photoluminescence spectra of ion implanted InAs/InP quantum dots (QDs) followed by rapid thermal annealing were studied. By employing a recently developed luminescence model for localized states ensemble, the broadening of the distribution of the localized QD states was determined from the fitting to the luminescence peak energy positions. The broadening of the distribution of the localized QD states reduces due to ion-implantation enhanced intermixing. The contribution of...[Show more]

dc.contributor.authorLi, Qing
dc.contributor.authorBarik, Satyanarayan
dc.contributor.authorJagadish, Chennupati
dc.contributor.authorTan, Hark Hoe
dc.date.accessioned2015-12-08T22:37:21Z
dc.date.available2015-12-08T22:37:21Z
dc.identifier.issn0022-3727
dc.identifier.urihttp://hdl.handle.net/1885/35489
dc.description.abstractTemperature dependent photoluminescence spectra of ion implanted InAs/InP quantum dots (QDs) followed by rapid thermal annealing were studied. By employing a recently developed luminescence model for localized states ensemble, the broadening of the distribution of the localized QD states was determined from the fitting to the luminescence peak energy positions. The broadening of the distribution of the localized QD states reduces due to ion-implantation enhanced intermixing. The contribution of carrier distribution within the localized QD states to the luminescence linewidth decreases after ion-implantation enhanced intermixing. The effect of doses and types of ions used for implantation were also investigated.
dc.publisherInstitute of Physics Publishing
dc.sourceJournal of Physics D: Applied Physics
dc.subjectKeywords: Annealing; Ions; Light emission; Light sources; Luminescence; Mixing; Optical waveguides; Quantum electronics; Rapid thermal annealing; Rapid thermal processing; Carrier distributions; InAs/InP; Localized states; Luminescence models; Luminescence peaks; Q
dc.titleEffect of ion-implantation enhanced intermixing on luminescence of InAs/InP quantum dots
dc.typeJournal article
local.description.notesImported from ARIES
local.identifier.citationvolume41
dc.date.issued2008
local.identifier.absfor020499 - Condensed Matter Physics not elsewhere classified
local.identifier.ariespublicationu3488905xPUB125
local.type.statusPublished Version
local.contributor.affiliationLi, Qing, College of Physical and Mathematical Sciences, ANU
local.contributor.affiliationBarik, Satyanarayan, College of Physical and Mathematical Sciences, ANU
local.contributor.affiliationTan, Hoe Hark, College of Physical and Mathematical Sciences, ANU
local.contributor.affiliationJagadish, Chennupati, College of Physical and Mathematical Sciences, ANU
local.bibliographicCitation.issue205107
local.bibliographicCitation.startpage1
local.bibliographicCitation.lastpage6
local.identifier.doi10.1088/0022-3727/41/20/205107
dc.date.updated2016-02-24T09:58:03Z
local.identifier.scopusID2-s2.0-56349172306
local.identifier.thomsonID000260131700025
CollectionsANU Research Publications

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