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Defects in Ge and Si caused by 1 MeV Si+ implantation

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Hickey, D P; Bryan, Z L; Jones, K S; Elliman, Robert; Haller, E E

Description

Cross-sectional transmission electron microscopy was used to study defect formation and evolution in the (001) Ge and Si wafers implanted with 1 MeV Si+ and 40 keV Si+ at a dose of 1× 1014 cm-2. As expected, upon annealing, the {311} extended defects for

CollectionsANU Research Publications
Date published: 2008
Type: Journal article
URI: http://hdl.handle.net/1885/35396
Source: Journal of Vacuum Science and Technology B
DOI: 10.1116/1.2834557

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