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Clusterization of vacancy defects in ZnO irradiated with 2 MeV O+

Zubiaga, A; Tuomisto, F; Coleman, Victoria A; Jagadish, Chennupati

Description

Slow positrons have been used to study ZnO layers grown on a-axis sapphire and irradiated by 2 MeV O+ ions to fluences from 1012 cm-2 to 1017 cm-2. At low fluences Zn vacancies are observed, and their introduction rate is estimated as 2000 cm-1. At the highest fluences of 1016-1017 cm-2 vacancy clusters are formed. The extent of the primary damage and its recovery is discussed.

CollectionsANU Research Publications
Date published: 2008
Type: Journal article
URI: http://hdl.handle.net/1885/35305
Source: Applied Surface Science
DOI: 10.1016/j.apsusc.2008.05.197

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