Two-color InGaAs/GaAs quantum dot infrared photodetectors by selective area interdiffusion
We report the postgrowth fabrication of two-color InGaAsGaAs quantum dot infrared photodetectors (QDIPs). By capping half of the as-grown QDIP structure with titanium dioxide (Ti O2) and performing rapid thermal annealing under the optimized condition, a
|Collections||ANU Research Publications|
|Source:||Applied Physics Letters|
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