Optical emission from erbium-doped silica nanowires
Infrared optical emission from erbium-doped silica nanowires is shown to have property characteristic of the material nanostructure and to provide the basis for the fabrication of integrated photonic devices and biosensors. Silica nanowires of approximately 150 nm diameter were grown on a silicon wafer by metal-induced growth using a thin (20 nm) sputter-deposited palladium layer as a catalyst. The resulting wires were then ion implanted with 110 keV ErO- ions and annealed at 900 °C to...[Show more]
|Collections||ANU Research Publications|
|Source:||Journal of Applied Physics|
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