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Boron diffusion in amorphous silicon-germanium alloys

Edelman, L A; Phen, M S; Jones, K S; Elliman, Robert; Rubin, L

Description

The effect of Ge alloying on B diffusion in amorphous Si1-x Gex alloys is reported for x=0-0.24. The diffusivity was not observed to exhibit any transient decay. The diffusivity decreases with increasing Ge concentration. The activation energy for B diffusion appears to increase from 2.8 eV for amorphous Si to 3.6 eV for amorphous Si0.76 Ge0.24. It is suggested that, in these alloys, Ge distorts the amorphous Si network thereby increasing B trapping by Si.

CollectionsANU Research Publications
Date published: 2008
Type: Journal article
URI: http://hdl.handle.net/1885/34070
Source: Applied Physics Letters
DOI: 10.1063/1.2919085

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