Boron diffusion in amorphous silicon-germanium alloys
The effect of Ge alloying on B diffusion in amorphous Si1-x Gex alloys is reported for x=0-0.24. The diffusivity was not observed to exhibit any transient decay. The diffusivity decreases with increasing Ge concentration. The activation energy for B diffusion appears to increase from 2.8 eV for amorphous Si to 3.6 eV for amorphous Si0.76 Ge0.24. It is suggested that, in these alloys, Ge distorts the amorphous Si network thereby increasing B trapping by Si.
|Collections||ANU Research Publications|
|Source:||Applied Physics Letters|
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