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Thin film deposition of Ge33As12 Se55 by pulsed laser deposition and thermal evaporation: comparison of properties

Jarvis, Ruth; Wang, Rongping; Rode, Andrei V; Zha, Congji; Luther-Davies, Barry

Description

Thin films of Ge33As12Se55 were produced using two deposition techniques, ultra-fast pulsed laser deposition (UFPLD) and thermal evaporation (TE), and their properties have been investigated. The chemical composition of the UFPLD films was virtually identical to the composition of the chalcogenide glass targets, whereas the composition of films deposited by TE was significantly different from the target material. Heating of the substrate with a temperature gradient during deposition produced a...[Show more]

dc.contributor.authorJarvis, Ruth
dc.contributor.authorWang, Rongping
dc.contributor.authorRode, Andrei V
dc.contributor.authorZha, Congji
dc.contributor.authorLuther-Davies, Barry
dc.date.accessioned2015-12-08T22:27:24Z
dc.identifier.issn0022-3093
dc.identifier.urihttp://hdl.handle.net/1885/34061
dc.description.abstractThin films of Ge33As12Se55 were produced using two deposition techniques, ultra-fast pulsed laser deposition (UFPLD) and thermal evaporation (TE), and their properties have been investigated. The chemical composition of the UFPLD films was virtually identical to the composition of the chalcogenide glass targets, whereas the composition of films deposited by TE was significantly different from the target material. Heating of the substrate with a temperature gradient during deposition produced a gradient in composition in both UFPLD and TE films.
dc.publisherElsevier
dc.sourceJournal of Non-crystalline Solids
dc.subjectKeywords: Arsenic; Chalcogenides; Dielectric properties; Germanium; Pulsed laser deposition; Raman spectroscopy; Selenium; Thermal evaporation; Film composition; Laser deposition; Ultra fast pulsed laser deposition; Thin films Chalcogenides; Composition; Dielectric properties; Ge33As12Se55; Laser deposition; Raman spectroscopy; Thermal evaporation; Thin films
dc.titleThin film deposition of Ge33As12 Se55 by pulsed laser deposition and thermal evaporation: comparison of properties
dc.typeJournal article
local.description.notesImported from ARIES
local.identifier.citationvolume353
dc.date.issued2007
local.identifier.absfor091201 - Ceramics
local.identifier.absfor020406 - Surfaces and Structural Properties of Condensed Matter
local.identifier.ariespublicationu9912193xPUB108
local.type.statusPublished Version
local.contributor.affiliationJarvis, Ruth, College of Physical and Mathematical Sciences, ANU
local.contributor.affiliationWang, Rongping, College of Physical and Mathematical Sciences, ANU
local.contributor.affiliationRode, Andrei V, College of Physical and Mathematical Sciences, ANU
local.contributor.affiliationZha, Congji, College of Physical and Mathematical Sciences, ANU
local.contributor.affiliationLuther-Davies, Barry, College of Physical and Mathematical Sciences, ANU
local.description.embargo2037-12-31
local.bibliographicCitation.startpage947
local.bibliographicCitation.lastpage949
local.identifier.doi10.1016/j.jnoncrysol.2006.12.079
dc.date.updated2015-12-08T09:19:37Z
local.identifier.scopusID2-s2.0-33947216810
CollectionsANU Research Publications

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